1 publication order number : NGTB15N60R2FG/d www.onsemi.com ? semiconductor component s industries, llc, 2014 december 2014 - rev. 1 ordering information see detailed ordering and shipping info rmation on page 7 of this data sheet. NGTB15N60R2FG features ? reverse conducting ii igbt ? igbt v ce (sat)=1.85v typ. (i c =15a, v ge =15v) ? igbt t f =75ns typ. ?? diode v f =1.7v typ. (i f =15a) ?? diode t rr =95ns typ. ?? 10 ? s short circuit capability applications ? general purpose inverter specifications absolute maximum ratings at ta = 25 ? c, unless otherwise specified parameter symbol value unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges ? 20 v collector current (dc) @tc=25 ? c * 2 i c * 1 24 a limited by tjmax @tc=100 ? c * 2 14 a collector current (peak) i cp 60 a pulse width limited by tjmax diode average output current i o 15 a power dissipation p d 54 w tc=25 ? c (our ideal heat dissipation condition) * 2 junction temperature tj 175 ? c storage temperature tstg ? 55 to +175 ? c note : *1 collector current is calculated from the following formula. ? ? *2 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. igbt 600v, 14a, n-channel tjmax - tc i c (tc)= r th (j-c) v ce (sat) (i c (tc)) stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should n ot be assumed, damage may occur and reliability may be affected. marking electrical connection n-channel 1 3 2 1:gate 2:collecto r 3:emitter to-220f-3fs gtb15n 60r2 lot no.
NGTB15N60R2FG www.onsemi.com 2 electrical characteristics at ta = 25 ? c, unless otherwise specified parameter symbol conditions value unit min typ max collector to emitter breakdown voltage v( br ) ces i c =500 ? a, v ge =0v 600 v collector to emitter cut off current i ces v ce =600v, v ge =0v tc=25 ? c 10 ? a tc=125 ? c 1 ma gate to emitter leakage current i ges v ge = ? 20v, v ce =0v ? 100 na gate to emitter threshold voltage v ge (th) v ce =20v, i c =250 ? a 4.5 7.0 v collector to emitter saturation voltage v ce ( sat ) v ge =15v, i c =15a tc=25 ? c 1.85 2.1 v v ge =15v, i c =14a tc=100 ? c 2.0 2.3 v forward diode voltage v f i f =15a 1.7 2.1 v input capacitance cies v ce =20v, f=1mhz 2000 pf output capacitance coes 65 pf reverse transfer capacitance cres 50 pf turn-on delay time t d (on) v cc =300v, i c =15a r g =30 ? , l=500 ? h v ge =0v/15v vclamp=400v tc=25 ? c see fig.1, see fig.2 70 ns rise time t r 40 ns turn-on time ton 200 ns turn-off delay time t d (off) 190 ns fall time t f 75 ns turn-off time toff 290 ns turn-on energy eon 550 ? j turn-off energy eoff 220 ? j total gate charge qg v ce =300v, v ge =15v, i c =15a 80 nc gate to emitter charge qge 16 nc gate to collector ?miller? charge qgc 38 nc diode reverse recovery time t rr i f =15a,di/dt=300a/ ? s, v cc =300v, see fig.3 95 ns thermal characteristics at ta = 25 ? c, unless otherwise specified parameter symbol conditions value unit thermal resistance igbt (junction to case) rth(j-c) (igbt) tc=25 ? c (our ideal heat dissipation condition) * 2 2.78 ? c/w thermal resistance (junction to ambient) rth(j-a) 69 ? c/w note : *2 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product per formance may not be indicated by the electrical characteristics if operated under different conditions.
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NGTB15N60R2FG www.onsemi.com 6 fig.1 switching time test circuit fig.2 timing chart fig.3 reverse recovery time test circuit r g v cc NGTB15N60R2FG dut di o de 500 ? h 90% 0 90% 0 10% 10% v ge v ce i c 10% 10% 90% 10% t off t d (off) t f t r t d (on) t on e off e on v cc NGTB15N60R2FG 500 ? h driver igbt dut
NGTB15N60R2FG www.onsemi.com 7 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidiaries in the united st ates and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a lis ting of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to make changes with out further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any parti cular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specific ations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated fo r each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as com ponents in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees ar ising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that sci llc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject t oall applicable copyright laws and is not for resale in any manner. package dimensions NGTB15N60R2FG to-220f-3fs case 221am issue o unit : mm 1:gate 2:collector 3:emitter ordering information device package shipping note NGTB15N60R2FG to-220f-3fs 50 pcs. / tube pb-free and halogen free
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